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| TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 2.40.1 0.475 1 4 * * * High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (PNP Transistor) Low collector-emitter saturation: VCE (sat) = -0.19 V (max) (PNP Transistor) High-speed switching: tf = 40 ns (typ.) (PNP Transistor) 0.65 2.90.1 B A 0.05 M B 0.80.05 S 0.025 S 0.170.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 Absolute Maximum Ratings (Ta = 25C) Transistor Characteristics Collector-base voltage Symbol VCBO VCEO VEBO DC Pulse IC ICP IB PC (Note 1) Tj Rating -30 -20 -7 -3.0 -5.0 -250 1.0 150 Unit V 1.Source 2.Collector 3.Collector 4.Collector 5.Emitter 6.Base 7.Gate 8.Drain 1.12 +0.13 -0.12 0.28 +0.1 -0.11 JEDEC JEITA 2-3V1B Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature V V A mA W C TOSHIBA Weight : 0.017g (Typ.) MOS FET Characteristics Drain-source voltage Gate-source voltage Drain current Channel temperature DC Pulse Symbol VDSS VGSS ID IDP Tj Rating 20 10 100 200 150 Unit V V mA C Note 1: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645mm2) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 2.80.1 Swtching Applications Load Switch Applications Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive Unit: mm 0.330.05 0.05 M A 8 5 TPCP8F01 Common Absolute Maximum Rating (Ta = 25C) Characteristics Storage temperature range Symbol Tstg Rating -55 to 150 Unit C Figure 2 Marking (Note 3) 8 7 6 5 8F01 * Type Lot No. (Weekly code) 1 2 3 4 Note 3 : Black round marking "" located on the left lower side of parts number marking "8F01" indicates terminal No.1 * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2006-11-13 TPCP8F01 Electrical Characteristics (Ta = 25C) Transistor Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector Output Capacitance Rise time Switching time Storage time Fall time 20us IB2 IB1 Vin IB2 IB1 RL Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf Test Condition VCB = -30 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = -0.5 A VCE = -2 V, IC = -1.6 A IC = -1.6 A, IB = -53 mA IC = -1.6 A, IB = -53 mA VCB = -10 V, IE = 0, f = 1MHz See Figure 3 circuit diagram VCC -12 V, RL = 7.5 - -IB1 = IB2 = -53 mA Min -20 200 100 Typ. 28 70 150 40 Max -100 -100 500 -0.19 -1.10 Unit nA nA V V V pF ns Figure 3. Switching Time Test Circuit & Timing Chart Vout Duty Cycle<1% VCC MOS FET Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate Threshold voltage Forward Transfer Admittance Symbol IGSS V (BR) DSS IDSS Vth |Yfs| Test Condition VGS = -10 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA, VGS = 4.0 V Min 20 0.6 40 Typ. 1.5 2.2 5.2 9.3 4.5 9.8 70 125 Max 1 1 1.1 3 4 15 Unit A V A V mS Drain-source ON resistance RDS(ON) ID = 10 mA, VGS = 2.5 V ID = 1 mA, VGS = 1.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDD -3 V, RL = 300 - VGS = 0 to 2.5V VDS = 3 V, VGS = 0, f = 1 MHz pF ns Figure 4. Switching Time Test Circuit & Timing Chart Vout 2.5V Vin Rg RL 0 10us VDD Gate Pulse Width 10us, tr,tf<5ns (Zout=50ohm),Common Source,Ta=25C Duty Cycle<1% Precautions Vth can be expressed as voltage between gate and source when low operating current value is ID = 100A for this product. For normal switching operation, VGS(ON) requires higher voltage than Vth snd VGS(OFF) requires lower voltage than Vth. (relationship can be established as follows: VGS(OFF) Vth VGS(ON)) Please take this into consideration for using the device. VGS recommended voltage of 2.5V or higher to turn on this product. 3 2006-11-13 TPCP8F01 PNP IC - VCE -6 Common emitter Ta = 25C Single nonrepetitive pulse -80 mA -100 mA -4 -40 mA -60 mA 10000 hFE - IC Common emitter VCE = -2 V Single nonrepetitive pulse Ta = 100C 25C 100 -55C -5 (A) Collector current IC -3 -20 mA -2 -10 mA DC current gain hFE 1000 10 -1 IB = -5 mA 1 0.001 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 0.01 0.1 1 10 Collector-emitter voltage VCE (V) Collector current -IC (A) VCE (sat) - IC 1 Common emitter = 30 Single nonrepetitive pulse 10 VBE (sat) - IC Common emitter = 30 Single nonrepetitive pulse Collector emitter saturation voltage -VCE (sat) (V) Base-emitter saturation voltage -VBE (sat) (V) 0.1 Ta = 100C 1 Ta = -55C 100C 25C 0.1 25C 0.01 -55C 0.001 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 Collector current -IC (A) Collector current -IC (A) IC - VBE -5 Common emitter VCE = -2 V Single nonrepetitive pulse Collector current IC (A) -4 -3 Ta = 100C -55C -2 25C -1 0 0 -0.4 -0.8 -1.2 -1.6 Base-emitter voltage VBE (V) 4 2006-11-13 TPCP8F01 rth (j-c) - tw Transient thermal resistance (junction- case) rth (j-c) (C/W) 1000 100 10 1 0.001 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operation Area 10 IC max (pulsed) * 10 ms* 1 ms* 100 s* IC max (continuous) 10 s* (A) 100 ms* 1 DC OPERATION (Ta = 25C) 10 s* *: Single nonrepetitive pulse Ta = 25C Note that the curves for 100 ms, 10 s and DC operation will be 0.1 different when the devices aren't mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation These characteristic curves must be derated linearly with increase 0.01 in temperature. 0.1 1 Collector current -IC 10 VCEO max 100 Collector-emitter voltage -VCEO (V) 5 2006-11-13 TPCP8F01 Nch-MOS 250 4 3 2.5 200 10 ID - VDS Common source Ta = 25C 12 RDS (ON) - ID Common source Ta = 25C (A) 1.9 150 Drain-source ON resistance RDS (ON) () 2.3 2.1 10 8 VGS = 1.5 V ID 6 Drain current 100 1.7 4 2.5 4 50 1.5 VGS = 1.3 V 2 0 0 0.5 1.0 1.5 2.0 0 1 10 100 1000 Drain-source voltage VDS (V) Drain current ID (A) 8 7 RDS (ON) - Ta (S) Common source 1000 Yfs - ID Common source VDS = 20 V Ta = 25C Drain-source ON resistance RDS (ON) () 6 5 4 3 2 1 0 -25 Yfs Forward transfer admittance 100 10 0 25 50 75 100 125 1 1 150 10 100 1000 Ambient temperature Ta (C) Drain current ID (A) 10000 t - ID Common source VDD = 3 V VGS = 0 to 2.5V Ta = 25C 100 C - VDS Common source VGS = 0 V f = 1 MHz Ta = 25C (ns) toff 1000 tf t C Capacitance (pF) 10 Ciss Coss ton tr Switching time 100 Crss 1 0.1 10 0.1 1 10 100 1 10 100 Drain current ID (mA) Drain-source voltage VDS (V) 6 2006-11-13 TPCP8F01 ID - VGS 1000 Common source VDS = 3 V 8 RDS (ON) - VGS Common source ID = 10 mA ID (mA) 100 Drain-source ON resistance RDS (ON) () 6 10 Ta = 100C 25 Drain current 4 1 -25 0.1 Ta = 100C 2 -25 25 0.01 0 1 2 3 0.1 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Vth - Ta 2.0 IDR - VDS IDR (mA) Common source ID = 0.1 mA VDS = 3 V 250 Common source VGS = 0 V Ta = 25C Vth (V) 1.6 200 Gate threshold voltage 0.8 Drain reverse current 1.2 150 100 0.4 50 0 25 0 25 50 75 100 125 150 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Ambient temperature Ta (C) Drain-source voltage VDS (V) 7 2006-11-13 TPCP8F01 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2006-11-13 |
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